High-Density Crossbar Arrays Based on a Si Memristive System

被引：468

作者：

Jo, Sung Hyun ^{[1
]}

Kim, Kuk-Hwan ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 02期

基金：

美国国家科学基金会;

关键词：

AMORPHOUS-SILICON; DEVICES; ARCHITECTURE; MEMORY; NANODEVICES; CIRCUITS;

D O I：

10.1021/nl8037689

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system. A two-terminal hysteretic resistive switch (memristive device) is formed at each crosspoint of the array and can be addressed with high yield and ON/OFF ratio. The crossbar array can be implemented as either a resistive random-access-memory (RRAM) or a write-once type memory depending on the device configuration. The demonstration of large-scale crossbar arrays with excellent reproducibility and reliability also facilitates further studies on hybrid nano/CMOS systems.

引用

页码：870 / 874

页数：5

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