Switching and filament formation in hot-wire CVD p-type a-Si:H devices

被引：13

作者：

Hu, J ^{[1
]}

Branz, HM ^{[1
]}

Crandall, RS ^{[1
]}

Ward, S ^{[1
]}

Wang, Q ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2003年 / 430卷 / 1-2期

关键词：

switching; amorphous silicon; filaments;

D O I：

10.1016/S0040-6090(03)00117-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricate metal /a-Si/metal thin film switches which incorporate hot-wire chemical vapor deposition (HWCVD) Si layers. A H-diluted gas mixture is used to grow the B-doped, 1000 A hydrogenated amorphous silicon (a-Si:H) layers at approximately 10 Angstrom/s. We compare switching behavior in Cr/a-Si:H(p)/Ag and c-Si(p)/a-Si:H(p)/Ag structures containing p-type hydrogenated amorphous silicon. We observed that the switching is polarity-dependent only in the sample on c-Si(p). Switching to a low-resistance state occurs at 0.4 mA/cm(2) when any of the metal contacts are biased positive. When the c-Si(p) is biased positive holes are injected and no switching occurs even up to 4 A/cm(2). We suggest that the switching requires a blocking metal/a-Si(p) contact, possibly because local electrical breakdown initiates metal filament formation. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：249 / 252

页数：4

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