ANALOG MEMORY EFFECTS IN METAL/A-SI-H/METAL MEMORY DEVICES

被引：9

作者：

SNELL, AJ ^{[1
]}

LECOMBER, PG ^{[1
]}

HAJTO, J ^{[1
]}

ROSE, MJ ^{[1
]}

OWEN, AE ^{[1
]}

OSBORNE, IS ^{[1
]}

机构：

[1] UNIV EDINBURGH,DEPT ELECT ENGN,EDINBURGH EH9 3JL,MIDLOTHIAN,SCOTLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80352-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper we present experimental data for Metal/a-Si:H/Metal structures which demonstrate that they can be programmed into a range of non-volatile resistance states between 1 k-OMEGA and 1 M-OMEGA with nanosecond pulses of less than 5 V magnitude. A number of results are presented which show the importance of the top metal in the device operation.

引用

页码：1257 / 1262

页数：6

共 9 条

[1] QUANTIZED ELECTRON EFFECTS IN METAL A-SI-H METAL THIN-FILM STRUCTURES [J].

HAJTO, J ;

ROSE, MJ ;

SNELL, AJ ;

OSBORNE, IS ;

OWEN, AE ;

LECOMBER, PG .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :499-502

[2] QUANTIZED ELECTRON-TRANSPORT IN AMORPHOUS-SILICON MEMORY STRUCTURES [J].

HAJTO, J ;

OWEN, AE ;

GAGE, SM ;

SNELL, AJ ;

LECOMBER, PG ;

ROSE, MJ .

PHYSICAL REVIEW LETTERS, 1991, 66 (14) :1918-1921

[3] ANALOG MEMORY AND BALLISTIC ELECTRON EFFECTS IN METAL-AMORPHOUS SILICON STRUCTURES [J].

HAJTO, J ;

OWEN, AE ;

SNELL, AJ ;

LECOMBER, PG ;

ROSE, MJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01) :349-369

[4] THE SWITCHING MECHANISM IN AMORPHOUS-SILICON JUNCTIONS [J].

LECOMBER, PG ;

OWEN, AE ;

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HAJTO, J ;

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[5] CURRENT TRANSPORT IN BISTABLE GRANULAR STRUCTURES [J].

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SOLID STATE COMMUNICATIONS, 1975, 17 (08) :939-943

[6]

OSBORNE IS, IN PRESS

[7] AMORPHOUS-SILICON ANALOG MEMORY DEVICES [J].

ROSE, MJ ;

HAJTO, J ;

LECOMBER, PG ;

GAGE, SM ;

CHOI, WK ;

SNELL, AJ ;

OWEN, AE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) :168-170

[8]

ROSE MJ, IN PRESS

[9]

ROSE MJ, 1991, P MRS S, P219

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