THE SWITCHING MECHANISM IN AMORPHOUS-SILICON JUNCTIONS

被引：57

作者：

LECOMBER, PG ^{[1
]}

OWEN, AE ^{[1
]}

SPEAR, WE ^{[1
]}

HAJTO, J ^{[1
]}

SNELL, AJ ^{[1
]}

CHOI, WK ^{[1
]}

ROSE, MJ ^{[1
]}

REYNOLDS, S ^{[1
]}

机构：

[1] UNIV EDINBURGH,DEPT ELECT ENGN,EDINBURGH EH8 9YL,MIDLOTHIAN,SCOTLAND

来源：

关键词：

D O I：

10.1016/0022-3093(85)90912-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1373 / 1382

页数：10

共 15 条

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OWEN, AE
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[3] DAMICO A, 1984, SEMICONDUCT SEMIMET, V21, P209
[4] GABRIEL MC, 1982, J NON-CRYST SOLIDS, V48, P297, DOI 10.1016/0022-3093(82)90167-3
[5] GANGOPADHYAY S, IN PRESS
[6] LECOMBER PG, 1984, SEMICONDUCT SEMIMET, V21, P275
[7] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +
[8] MEMORY SWITCHING IN AMORPHOUS-SILICON DEVICES
OWEN, AE
LECOMBER, PG
SPEAR, WE
HAJTO, J
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1273 - 1280
[9] THRESHOLD CHARACTERISTICS OF CHALCOGENIDE-GLASS MEMORY SWITCHES
OWEN, AE
ROBERTSON, JM
MAIN, C
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 29 - 52
[10] NEW AMORPHOUS-SILICON ELECTRICALLY PROGRAMMABLE NON-VOLATILE SWITCHING DEVICE
OWEN, AE
LECOMBER, PG
SARRABAYROUSE, G
SPEAR, WE
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (02): : 51 - 54