Sol-gel derived (Li, Mg):: ZnO films with high c-axis orientation and electrical resistivity

被引：36

作者：

Liu, J

Weng, WJ ^{[1
]}

Ding, WH

Cheng, K

Du, PY

Shen, G

Han, GR

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

[2] Shenyang Jianzhu Univ, Sch Mat Sci & Engn, Shenyang 110168, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2005年 / 198卷 / 1-3期

关键词：

ZnO film; Mg and Li doping; preferential orientation; resistivity;

D O I：

10.1016/j.surfcoat.2004.10.081

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO films with high orientation and resistivity have a great potential in piezoelectrical devices. In this work, Li- and Mg-doped ZnO films on glass substrates were prepared by sot-gel spin-coating and two-step growth. The effects of the dopants and heating temperature on c-axis orientation and resistivity of the resulting films were investigated. For the ZnO films formed by two-step growth, the orientation of the first grown layer played a significant role in c-axis orientation of the film. The results showed that Mg doping into Li:ZnO films could improve c-axis orientation and increase the resistivity, the optimized (Li,Mg):ZnO film had a highly c-axis orientation, small grain size and resistivity of 11.18 x 10(7) Omega center dot cm. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：274 / 277

页数：4

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