Electro-optic property of ZnO:X (X = Li,Mg) thin films

被引:73
作者
Nagata, T [1 ]
Shimura, T [1 ]
Ashida, A [1 ]
Fujimura, N [1 ]
Ito, T [1 ]
机构
[1] Univ Osaka Prefecture, Grad Sch Engn, Dept Appl Mat Sci, Sakai, Osaka 5998531, Japan
关键词
characterization; laser epitaxy; oxides; zinc compounds; semiconducting; materials; non-linear optical devices;
D O I
10.1016/S0022-0248(01)01957-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have proposed an application of ZnO:X (X = Li,Mg,Ni,Al etc.) films for monolithic optical integrated circuits (OlCs) (Mat. Res. Soc. Symp. Proc. 574 (1999) 317). Although non-doped ZnO has an electro-optic effect, it is only a Pockel's effect. The electro-optic effect of Pb(Zr,Ti)O-3 (Jpn. J. Appl, Phys. 34 (1995) 509 1) is superior to ZnO, because that is caused by a non-linear Kerr effect. Our group demonstrated that Li-doped ZnO (ZnO:Li) films exhibited ferroelectric behavior (Appl. Phys. A, in press). ZnO with ferroelectricity should have a non-linear electro-optic effect against the applied voltage. In this paper, to design the ZnO monolithic slab waveguide for electro-optical switch, the refractive indices of top and bottom electrode layers and core layer were investigated. Then, electro-optical property of ZnO:Li,Mg films was evaluated, and the possibility of applying to an optical switch was also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:533 / 537
页数:5
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