Defect chemical modeling of mesoscopic ion conduction in nanosized CaF2/BaF2 multilayer heterostructures

被引：39

作者：

Guo, Xiangxin ^{[1
]}

Matei, Ion ^{[1
]}

Jamnik, Janez ^{[1
]}

Lee, Jong-Sook ^{[1
]}

Maier, Joachim ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.76.125429

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interfacial and mesoscopic size effects in molecular beam epitaxy-grown CaF2/BaF2 heterolayers have been quantitatively analyzed on the basis of Gouy-Chapman and Mott-Schottky space-charge profiles. The linear dependence of the overall parallel conductivity on the inverse interfacial spacing found for large interfacial spacings (l > 50 nm) can be obtained from both models being in good agreement with the experimental data. An upward bending occurring for small interfacial spacings (l < 30 nm) can only be reproduced by the Mott-Schottky model based on the assumption of frozen-in impurity profiles.

引用

页数：7

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