SiC power diodes provide breakthrough performance for a wide range of applications

被引:122
作者
Hefner, AR [1 ]
Singh, R
Lai, JS
Berning, DW
Bouché, S
Chapuy, C
机构
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
[2] Cree Inc, Durham, NC 27703 USA
[3] Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
[4] Univ Montpellier 2, Inst Sci & Engn, ISIM, F-34095 Montpellier 5, France
基金
欧洲研究理事会; 美国国家科学基金会;
关键词
fast recovery rectifier; merged PiN Schottky diode; PiN diode; reverse recovery; SiC diode; SiC rectifier;
D O I
10.1109/63.911152
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V, The comparisons include the on-state characteristics, the reverse recovery characteristics, and power converter efficiency and electromagnetic interference (EMI), It is shown that a newly. developed 1500-V SiC merged PiN Schottky (MPS) diode has significant performance advantages over Si diodes optimized for various voltages in the range of 600 V through 1500 V, It is also shown that a newly developed 5000 V SiC PiN diode has significant performance advantages over Si diodes optimized for various voltages in the range of 2000 V through 5000 V, In a test case power converter, replacing the best 600 V Si diodes available with the 1500 V SiC MPS diode results in an increase of po,ver supply efficiency from 82% to 88% for switching at 186 kHz, and a reduction in EMI emissions.
引用
收藏
页码:273 / 280
页数:8
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