Structural investigation of gallium oxide (β-Ga2O3) nanowires grown by arc-discharge

Gallium oxide nanowires were synthesized by electric are discharge of GaN powders mixed with a small amount of Ni and Co. The crystal structure of nanowires was determined by multi-channel X-ray diffractometry (MC-XRD), FT-Raman spectroscopy and transmission electron microscopy (TEM). The analyzed results clearly show that the synthesized nanowires are monoclinic gallium oxide (beta -Ga2O3). Final morphology and microstructure of beta -Ga2O3 nanowires were changed depending on the presence of the transition metals into the nanowires. The beta -Ga2O3 nanowires grown by the assistance of transition metals demonstrate a smooth edge surface while containing twin defects at the center. The transition metals have enhanced the step growth of nanowires. However, in the case of the beta -Ga2O3 nanowires, where the transition metals are not shown on the surface, the nanowires demonstrate rather thin and long shapes with amorphous gallium oxide layers on the nanowire surface. (C) 2000 Elsevier Science B.V. All rights reserved.