Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy

被引:45
作者
Kusakabe, K [1 ]
Kikuchi, A [1 ]
Kishino, K [1 ]
机构
[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 3A期
关键词
GaN; AlN; strain; nano-column; molecular beam epitaxy;
D O I
10.1143/JJAP.40.L192
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the successful growth of free-standing GaN films on (0001) sapphire substrates by RF-molecular beam epitaxy. The kev to obtain unstrained GaN layers is employing self-organized GaN nano-columns which involve an air gap structure as a footing layer of overgrown GaN. The residual strain in overgrown GaN films is evaluated by measuring the lattice constant by X-ray diffraction. It is found that the c-axis length of overgrown GaN is estimated to be 5.1848 Angstrom. which is close to the value of strain-free GaN even with a layer thickness of 2.7 mum. Overgrown GaN peeled arbitrarily from GaN nano-columns is observed due to the cleaving process.
引用
收藏
页码:L192 / L194
页数:3
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