Crystallinity of Al2O3 films deposited by metalorganic chemical vapor deposition

被引：34

作者：

Pradhan, SK

Reucroft, PJ

Ko, YK

机构：

[1] Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA

[2] Kookmin Univ, Sch Met & Mat Engn, Seoul 136702, South Korea

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 176卷 / 03期

关键词：

MOCVD; alumina thin films; K-Al(2)O3;

D O I：

10.1016/S0257-8972(03)00750-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth of Al2O3 films on Si(1 1 1) substrates by metalorganic chemical vapor deposition (MOCVD) has been investigated. Films were deposited by MOCVD with aluminum-acetylacetonate as a precursor at various temperatures. At low temperatures (350-550 degreesC) amorphous films were obtained. As the temperature increased beyond 550 degreesC, the presence of crystalline Al2O3 was detected. At high temperatures (750-950 degreesC), the crystallinity of the film increased and a <0 1 1> kappa-Al2O3 textured film growth was observed at 950 degreesC. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：382 / 384

页数：3

共 21 条

[1]

Battiston GA, 2001, CHEM VAPOR DEPOS, V7, P69, DOI 10.1002/1521-3862(200103)7:2<69::AID-CVDE69>3.0.CO

[2]

2-Q

[3] MOCVD of aluminium oxide films using aluminiurn β-diketonates as precursors [J].