Chemical vapor deposition of Al2O3 films using highly volatile single sources

被引：59

作者：

Koh, W ^{[1
]}

Ku, SJ ^{[1
]}

Kim, Y ^{[1
]}

机构：

[1] KOREA RES INST CHEM TECHNOL,THIM FILM MAT LAB,TAEJON 305600,SOUTH KOREA

来源：

THIN SOLID FILMS | 1997年 / 304卷 / 1-2期

关键词：

aluminum oxide; chemical vapor deposition; depth profiling; organometallic vapor deposition;

D O I：

10.1016/S0040-6090(97)00132-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous Al2O3 films were grown on Si(100) and Si(111) substrates by low-pressure chemical vapor deposition in the temperature range of 250-600 degrees C using dimethylaluminum isopropoxide. dimethylaluminum tert-butoxide, and diethylaluminum isopropoxide as single sources. All these sources vaporize readily at room temperature under reduced pressure. The films were characterized by X-ray diffractometry, X-ray photoelectron spectroscopy, Anger electron spectroscopy and scanning electron microscopy. Auger depth profiling analysis of the samples indicates no appreciable carbon incorporation in the films. (C) 1997 Elsevier Science S.A.

引用

页码：222 / 224

页数：3

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