GROWTH-TEMPERATURE DEPENDENCE OF THE QUALITY OF AL2O3 PREPARED BY SEQUENTIAL SURFACE CHEMICAL-REACTION OF TRIMETHYLALUMINUM AND H2O2

被引：9

作者：

FAN, JF ^{[1
]}

TOYODA, K ^{[1
]}

机构：

[1] INST PHYS & CHEM RES, WAKO, SAITAMA 35101, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9B期

关键词：

AL2O3; GROWTH TEMPERATURE; CHEMICAL STRENGTH; HYDROGEN CONTENT; ELECTRICAL PROPERTIES;

D O I：

10.1143/JJAP.32.L1349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dependence of the quality of thin films of Al2O3 On the growth temperature was investigated in the surface reaction limited growth system. It has been found that the density, the chemical bonding strength, and the electrical properties improve significantly with increasing growth temperature although the growth rate remains nearly constant. Also, Fourier transform infrared spectroscopy indicates that hydrogen incorporation into the films is nearly negligible.

引用

页码：L1349 / L1351

页数：3

共 7 条

[1] LOW-TEMPERATURE GROWTH OF THIN-FILMS OF AL2O3 BY SEQUENTIAL SURFACE CHEMICAL-REACTION OF TRIMETHYLALUMINUM AND H2O2
FAN, JF
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[6] PHOTODEPOSITION OF ALUMINUM-OXIDE AND ALUMINUM THIN-FILMS
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 454 - 456
[7] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS
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