A NEW ROUTE TO THE DEPOSITION OF AL2O3 BY MOCVD

被引:6
作者
JONES, AC [1 ]
HOULTON, DJ [1 ]
RUSHWORTH, SA [1 ]
CRITCHLOW, GW [1 ]
机构
[1] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND
来源
JOURNAL DE PHYSIQUE IV | 1995年 / 5卷 / C5期
关键词
D O I
10.1051/jphyscol:1995566
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thin films of aluminium oxide, Al2O3, have been deposited by atmospheric pressure MOCVD using trimethylaluminium (Me(3)Al) and iso-propanol ((PrOH)-O-i) as precursors. The films were deposited over the temperature range 400-600 degrees C and had growth rates of up to 67 Angstrom min(-1). Analysis by Auger electron spectroscopy showed that films deposited at 400 degrees C were high purity with carbon contamination < 0.5 at %.
引用
收藏
页码:557 / 560
页数:4
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