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LOW-TEMPERATURE ALUMINUM-OXIDE DEPOSITION USING TRIMETHYLALUMINUM
被引:25
作者
:
EHLE, RS
论文数:
0
引用数:
0
h-index:
0
EHLE, RS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
BALIGA, BJ
KATZ, W
论文数:
0
引用数:
0
h-index:
0
KATZ, W
机构
:
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1983年
/ 12卷
/ 03期
关键词
:
D O I
:
10.1007/BF02650866
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:587 / 601
页数:15
相关论文
共 11 条
[1]
DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
: 948
-
&
[2]
GROWTH OF SILICA AND PHOSPHOSILICATE FILMS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(03)
: 990
-
994
[3]
PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(06)
: 941
-
944
[4]
DUFFY MT, 1970, RCA REV, P754
[5]
PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED FROM NITROUS OXIDE AND ALUMINUM TRIMETHYL
HALL, LH
论文数:
0
引用数:
0
h-index:
0
HALL, LH
ROBINETTE, WC
论文数:
0
引用数:
0
h-index:
0
ROBINETTE, WC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(10)
: 1624
-
+
[6]
GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
ITO, T
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
SAKAI, Y
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(07)
: 751
-
759
[7]
CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES
KERN, W
论文数:
0
引用数:
0
h-index:
0
KERN, W
HEIM, R
论文数:
0
引用数:
0
h-index:
0
HEIM, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(04)
: 562
-
&
[8]
LEED PW, 1961, CERAMICS, P15
[9]
PREPARATION AND PROPERTIES OF ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
SHEALY, JR
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
BALIGA, BJ
FIELD, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
FIELD, RJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(03)
: 558
-
561
[10]
SILVESTRI VJ, 1978, J ELECTROCHEM SOC, V123, P902
←
1
2
→
共 11 条
[1]
DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
: 948
-
&
[2]
GROWTH OF SILICA AND PHOSPHOSILICATE FILMS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(03)
: 990
-
994
[3]
PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(06)
: 941
-
944
[4]
DUFFY MT, 1970, RCA REV, P754
[5]
PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED FROM NITROUS OXIDE AND ALUMINUM TRIMETHYL
HALL, LH
论文数:
0
引用数:
0
h-index:
0
HALL, LH
ROBINETTE, WC
论文数:
0
引用数:
0
h-index:
0
ROBINETTE, WC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(10)
: 1624
-
+
[6]
GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
ITO, T
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
SAKAI, Y
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(07)
: 751
-
759
[7]
CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES
KERN, W
论文数:
0
引用数:
0
h-index:
0
KERN, W
HEIM, R
论文数:
0
引用数:
0
h-index:
0
HEIM, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(04)
: 562
-
&
[8]
LEED PW, 1961, CERAMICS, P15
[9]
PREPARATION AND PROPERTIES OF ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
SHEALY, JR
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
BALIGA, BJ
FIELD, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
FIELD, RJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, DEPT ELECT & SYST ENGN, TROY, NY 12181 USA
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(03)
: 558
-
561
[10]
SILVESTRI VJ, 1978, J ELECTROCHEM SOC, V123, P902
←
1
2
→