LOW-TEMPERATURE ALUMINUM-OXIDE DEPOSITION USING TRIMETHYLALUMINUM

被引：25

作者：

EHLE, RS

BALIGA, BJ

KATZ, W

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 03期

关键词：

D O I：

10.1007/BF02650866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：587 / 601

页数：15

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共 11 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
ABOAF, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &
[2] GROWTH OF SILICA AND PHOSPHOSILICATE FILMS
BALIGA, BJ
GHANDHI, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 990 - 994
[3] PREPARATION AND PROPERTIES OF TIN OXIDE-FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN
BALIGA, BJ
GHANDHI, SK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 941 - 944
[4] DUFFY MT, 1970, RCA REV, P754
[5] PROPERTIES OF ALUMINUM OXIDE FILMS OBTAINED FROM NITROUS OXIDE AND ALUMINUM TRIMETHYL
HALL, LH
ROBINETTE, WC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) : 1624 - +
[6] GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
SAKAI, Y
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759
[7] CHEMICAL VAPOR DEPOSITION OF SILICATE GLASSES FOR USE WITH SILICON DEVICES .1. DEPOSITION TECHNIQUES
KERN, W
HEIM, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) : 562 - &
[8] LEED PW, 1961, CERAMICS, P15
[9] PREPARATION AND PROPERTIES OF ZINC-OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINC
SHEALY, JR
BALIGA, BJ
FIELD, RJ
GHANDHI, SK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 558 - 561
[10] SILVESTRI VJ, 1978, J ELECTROCHEM SOC, V123, P902