INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TERI-TERT-BUTYLALUMINIUM AS AN ALTERNATIVE ALUMINUM SOURCE

被引：16

作者：

JONES, AC ^{[1
]}

AULD, J ^{[1
]}

RUSHWORTH, SA ^{[1
]}

HOULTON, DJ ^{[1
]}

CRITCHLOW, GW ^{[1
]}

机构：

[1] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1994年 / 4卷 / 10期

关键词：

D O I：

10.1039/jm9940401591

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of AlN have been deposited at 500 and 600-degrees-C by atmospheric-pressure MOCVD using the precursors tri-tert-butylaluminium (But3Al) and tert-butylamine (ButNH2). Growth rates of 0.5 mum h-1 were obtained at 500-degrees-C. Post-growth oxidation of the AlN films was prevented by the deposition of a protective Al overlayer using But3Al.

引用

页码：1591 / 1594

页数：4

共 22 条

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