MOVPE OF ALN AND GAN BY USING NOVEL PRECURSORS

The technique of low pressure MOVPE has been used to grow thin films of AIN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et2AIN3]3 (DEAA) and diethylgallium azide [Et2GaN3]3 (DEGA). In-situ growth rate measurements have been performed for AIN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of Al(x)Ga1-(x)N have also been deposited from triethylgallium (TEG), triethylaluminum (TEA1) and NH3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.