AL2O3 DEPOSITED BY THE OXIDATION OF TRIMETHYLALUMINUM AS GATE INSULATORS IN HYDROGEN SENSORS

被引：11

作者：

HUA, TH

ARMGARTH, M

机构：

[1] Linkoping Inst of Technology, Linkoping, Swed, Linkoping Inst of Technology, Linkoping, Swed

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 01期

关键词：

D O I：

10.1007/BF02667787

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 31

页数：5

共 9 条

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :948-&

[2] A STABLE HYDROGEN-SENSITIVE PD GATE METAL-OXIDE SEMICONDUCTOR CAPACITOR [J].

ARMGARTH, M ;

NYLANDER, C .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :91-92

[3] THE INFLUENCE OF DIFFERENT INSULATORS ON PALADIUM-GATE METAL-INSULATOR-SEMICONDUCTOR HYDROGEN SENSORS [J].

DOBOS, K ;

ARMGARTH, M ;

ZIMMER, G ;

LUNDSTROM, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :508-510

[4] PERFORMANCE OF GAS-SENSITIVE PD-GATE MOSFETS WITH SIO2 AND SI3N4 GATE INSULATORS [J].

DOBOS, K ;

STROTMAN, R ;

ZIMMER, G .

SENSORS AND ACTUATORS, 1983, 4 (04) :593-598

[5]

DUFFY MT, 1970, RCA REV, P754

[6] LOW-TEMPERATURE ALUMINUM-OXIDE DEPOSITION USING TRIMETHYLALUMINUM [J].

EHLE, RS ;

BALIGA, BJ ;

KATZ, W .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :587-601

[7] HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS [J].

LUNDSTROM, I .

SENSORS AND ACTUATORS, 1981, 1 (04) :403-426

[8]

MCCRACKIN FL, 1969, NBS479 TECHN NOT

[9] HYDROGEN INDUCED DRIFT IN PALLADIUM GATE METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

NYLANDER, C ;

ARMGARTH, M ;

SVENSSON, C .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1177-1188

← 1 →