HYDROGEN INDUCED DRIFT IN PALLADIUM GATE METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引:50
作者
NYLANDER, C
ARMGARTH, M
SVENSSON, C
机构
关键词
D O I
10.1063/1.334046
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1177 / 1188
页数:12
相关论文
共 44 条
[1]   ISFETS USING INORGANIC GATE THIN-FILMS [J].
ABE, H ;
ESASHI, M ;
MATSUO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1939-1944
[2]   VARIATIONAL CALCULATION OF IMAGE POTENTIAL NEAR A METAL SURFACE [J].
APPELBAU.JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1972, 6 (04) :1122-&
[3]   A STABLE HYDROGEN-SENSITIVE PD GATE METAL-OXIDE SEMICONDUCTOR CAPACITOR [J].
ARMGARTH, M ;
NYLANDER, C .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :91-92
[4]  
ARMGARTH M, 1982, 4TH P WORLD HYDR EN, P1717
[5]  
ARMGARTH M, 1983, P INT C SOLID STATE
[6]  
ARMGARTH M, UNPUB
[7]  
BALK P, 1973, I PHYS C SER, V19
[9]   THE SOLID-LIQUID INTERFACE [J].
BOOTSMA, GA ;
DEROOIJ, NF ;
VANSILFHOUT, A .
SENSORS AND ACTUATORS, 1981, 1 (02) :111-136
[10]  
BOUSSE L, 1978, THESIS TWENTE U TECH