PERFORMANCE OF GAS-SENSITIVE PD-GATE MOSFETS WITH SIO2 AND SI3N4 GATE INSULATORS

被引:26
作者
DOBOS, K
STROTMAN, R
ZIMMER, G
机构
来源
SENSORS AND ACTUATORS | 1983年 / 4卷 / 04期
关键词
D O I
10.1016/0250-6874(83)85072-0
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
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页码:593 / 598
页数:6
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共 14 条
[1]   A STABLE HYDROGEN-SENSITIVE PD GATE METAL-OXIDE SEMICONDUCTOR CAPACITOR [J].
ARMGARTH, M ;
NYLANDER, C .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :91-92
[2]  
CONRAD M, 1974, SURFACE SCI, V43, P462
[3]  
DOBOS K, 1984, UNPUB IEEE T ELE APR
[4]  
DOBOS K, 1979, 9TH P EUR SOL STAT D, P147
[5]  
DOBOS K, 1980, 4TH P INT C SOL STAT, P743
[6]   CHEMISORPTION AND CATALYTIC REACTIONS OF OXYGEN AND CARBON MONOXIDE ON A PALLADIUM(110) SURFACE [J].
ERTL, G ;
RAU, P .
SURFACE SCIENCE, 1969, 15 (03) :443-&
[7]  
KREY D, 1982, SENSOR ACTUATOR, V3, P169
[8]   HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS [J].
LUNDSTROM, I .
SENSORS AND ACTUATORS, 1981, 1 (04) :403-426
[9]   HYDROGEN SENSITIVE MOS-STRUCTURES .2. CHARACTERIZATION [J].
LUNDSTROM, I ;
SODERBERG, D .
SENSORS AND ACTUATORS, 1981, 2 (02) :105-138
[10]   HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J].
LUNDSTROM, KI ;
SHIVARAMAN, MS ;
SVENSSON, CM .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3876-3881