Status of high efficiency and high power ThinGaN®-LED development

被引：25

作者：

Baur, Johannes ^{[1
]}

Baumann, Frank ^{[1
]}

Peter, Matthias ^{[1
]}

Engl, Karl ^{[1
]}

Zehnder, Ulrich ^{[1
]}

Off, Juergen ^{[1
]}

Kuemmler, Volker ^{[1
]}

Kirsch, Markus ^{[1
]}

Strauss, Joerg ^{[2
]}

Wirth, Ralph ^{[1
]}

Streubel, Klaus ^{[1
]}

Hahn, Berthold ^{[1
]}

机构：

[1] OSRAM Optosemicond GmbH, Leibnizstr 4, D-93055 Regensburg, Germany

[2] OSRAM GmbH, Schwerzenbach 86830, Switzerland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

LIGHT-EMITTING-DIODES;

D O I：

10.1002/pssc.200880936

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we report on the improvement of ThinGaN (R)-PowerLED structures in epitaxy, chip design, phosphor efficiency and package design. The brightness of these devices increased by a factor of 4 over the last 4 years. We demonstrate 604 mW blue (440 nm; 3,24 V; 53% WPE), 129 lm cool-white light (5000 K; 3,25 V, 113 lm/W) and 88.2 lm warm-white (3200 K; 74.4 lm/W; CRI 80) emission for 1mm(2)-chip Dragon power LEDs at 350 mA operation. In an advanced device we realized values of 643 mW blue (440 nm; 3,24 V; 350 mA; WPE: 57%) and 155 lm white (5000 K, 350 mA, 3,24 V, 136 lm/W) emission. To our knowledge these are the highest brightness and efficacy values reported in literature. Also at 1.4 A operation current the performance of these multi quantum well epitaxy based structures is superior to the values reported for double heterostructure epitaxy based structures. By combination of phosphor converted white and red 1 mm(2) chip LEDs we realized a 3000 K warm white emitting device with 100 lm/W, CRI 90 and 850 lm emission. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S905 / S908

页数：4

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