Facile Synthesis of Wide-Bandgap Fluorinated Graphene Semiconductors

被引:121
作者
Chang, Haixin [2 ,3 ]
Cheng, Jinsheng [1 ]
Liu, Xuqing [2 ,3 ]
Gao, Junfeng [2 ,3 ]
Li, Mingjian [2 ,3 ]
Li, Jinghong [1 ]
Tao, Xiaoming [2 ,3 ]
Ding, Feng [2 ,3 ]
Zheng, Zijian [2 ,3 ]
机构
[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[2] Hong Kong Polytech Univ, Nanotechnol Ctr, Inst Text & Clothing, Hong Kong, Hong Kong, Peoples R China
[3] Hong Kong Polytech Univ, Adv Res Ctr Fash & Text, Shenzhen Res Inst, Shenzhen, Peoples R China
关键词
density functional theory; fluorine; graphene; ionic liquids; semiconductors; DENSITY-FUNCTIONAL THEORY; RAMAN-SCATTERING; GRAPHITE; NANORIBBONS; TRANSPARENT; EXFOLIATION; TEMPERATURE; COMPOSITE;
D O I
10.1002/chem.201100699
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The bandgap opening of graphene is extremely important for the expansion of the applications of graphene-based materials into optoelectronics and photonics. Current methods to open the bandgap of graphene have intrinsic drawbacks including small bandgap openings, the use hazardous/harsh chemical oxidations, and the requirement of expensive chemical-vapor deposition technologies. Herein, an eco-friendly, highly effective, low-cost, and highly scalable synthetic approach is reported for synthesizing wide-bandgap fluorinated graphene (F-graphene or or fluorographene) semiconductors under ambient conditions. In this synthesis, ionic liquids are used as the only chemical to exfoliate commercially available fluorinated graphite into single and few-layer F-graphene. Experimental and theoretical results show that the bandgap of F-graphene is largely dependent on the F coverage and configuration, and thereby can be tuned over a very wide range.
引用
收藏
页码:8896 / 8903
页数:8
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