High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration

被引：107

作者：

Masini, G ^{[1
]}

Colace, L

Assanto, G

Luan, HC

Kimerling, LC

机构：

[1] Terza Univ Rome, Dept Elect Engn, I-00146 Rome, Italy

[2] Terza Univ Rome, Natl Inst Phys Matter, INFM, RM3, I-00146 Rome, Italy

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 06期

基金：

美国国家科学基金会;

关键词：

heterojunctions; integrated optoelectronics; optical communications; photodetectors;

D O I：

10.1109/16.925232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p(+)-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 mum, respectively, reverse dark currents of 20 mA/cm(2) and response times of 800 ps.

引用

页码：1092 / 1096

页数：5

共 15 条

[1] BASORE PA, 1996, 25 IEEE PHOT SPEC C, P377
[2] Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si
Colace, L
Masini, G
Galluzzi, F
Assanto, G
Capellini, G
Di Gaspare, L
Palange, E
Evangelisti, F
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3175 - 3177
[3] Ge-on-Si approaches to the detection of near-infrared light
Colace, L
Masini, G
Assanto, G
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) : 1843 - 1852
[4] Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates
Colace, L
Masini, G
Assanto, G
Luan, HC
Wada, K
Kimerling, LC
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (10) : 1231 - 1233
[5] Low-energy yield spectroscopy determination of band offsets: Application to the epitaxial Ge/Si(100) heterostructure
DiGaspare, L
Capellini, G
Chudoba, C
Sebastiani, M
Evangelisti, F
[J]. APPLIED SURFACE SCIENCE, 1996, 104 : 595 - 600
[6] NORMAL-INCIDENCE STRAINED-LAYER SUPERLATTICE GE0.5SI0.5/SI PHOTODIODES NEAR 1.3 MU-M
HUANG, FY
ZHU, X
TANNER, MO
WANG, KL
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (04) : 566 - 568
[7] Monolithic InGaAs-on-silicon short wave Infrared Detector Arrays
Joshi, AM
Brown, R
Fitzgerald, EA
Wang, XD
Ting, S
Bulsara, M
[J]. PHOTODETECTORS: MATERIALS AND DEVICES II, 1997, 2999 : 211 - 224
[8] Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients
Levine, BF
Hawkins, AR
Hiu, S
Tseng, BJ
Reilley, JP
King, CA
Gruezke, LA
Johnson, RW
Zolnowski, DR
Bowers, JE
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (11) : 1507 - 1509
[9] High-quality Ge epilayers on Si with low threading-dislocation densities
Luan, HC
Lim, DR
Lee, KK
Chen, KM
Sandland, JG
Wada, K
Kimerling, LC
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (19) : 2909 - 2911
[10] NEW INFRARED DETECTOR ON A SILICON CHIP
LURYI, S
KASTALSKY, A
BEAN, JC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1135 - 1139

← 1 2 →