Low-energy yield spectroscopy determination of band offsets: Application to the epitaxial Ge/Si(100) heterostructure

被引：10

作者：

DiGaspare, L ^{[1
]}

Capellini, G ^{[1
]}

Chudoba, C ^{[1
]}

Sebastiani, M ^{[1
]}

Evangelisti, F ^{[1
]}

机构：

[1] INFM, UNITA ROMA 3, I-00146 ROME, ITALY

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00208-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We apply a new experimental method for determining band lineups at the Ge/Si(100) heterostructure. This method uses a modem version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum, thus allowing a direct and precise determination of the band lineup. We find an offset of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism.

引用

页码：595 / 600

页数：6

共 29 条

[1] EFFECT OF PHONON ENERGY-LOSS ON PHOTOEMISSIVE YIELD NEAR THRESHOLD [J].