Silicon nanocrystals and Er3+ ions in an optical microcavity

被引：46

作者：

Iacona, F

Franzò, G

Moreira, EC

Priolo, F

机构：

[1] CNR, Ist Nazl Metodol & Tecnol Microelettron, I-95121 Catania, Italy

[2] Ist Nazl Fis Mat, I-95129 Catania, Italy

[3] Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 12期

关键词：

D O I：

10.1063/1.1371936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of Si nanocrystals (nc) and Er-doped Si nc embedded within Si/SiO2 Fabry-Perot microcavities are investigated. It is shown that very narrow (Delta lambda similar to 1.5 nm) and intense luminescence peaks can be obtained within the 600-1000 nm wavelength range for Si nc and at around 1.54 mum for Er-doped Si nc by properly varying the cavity resonance. The luminescence intensity of the on-axis emission is over an order of magnitude above that of similar samples without a cavity and the overall luminescence is confined within a 30 degrees cone from the sample normal. The properties of these cavities are presented and the implications of the results discussed. (C) 2001 American Institute of Physics.

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页码：8354 / 8356

页数：3

相关论文

共 17 条

[1] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[2] Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes [J].

Franzo, G ;

Coffa, S ;

Priolo, F ;

Spinella, C .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2784-2793

[3] ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A ;

CARNERA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237

[4] The excitation mechanism of rare-earth ions in silicon nanocrystals [J].

Franzò, G ;

Vinciguerra, V ;

Priolo, F .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (01) :3-12

[5] Er3+ ions-Si nanocrystals interactions and their effects on the luminescence properties [J].

Franzò, G ;

Pacifici, D ;

Vinciguerra, V ;

Priolo, F ;

Iacona, F .

APPLIED PHYSICS LETTERS, 2000, 76 (16) :2167-2169

[6] 1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+ [J].

Fujii, M ;

Yoshida, M ;

Kanzawa, Y ;

Hayashi, S ;

Yamamoto, K .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1198-1200

[7] Correlation between luminescence and structural properties of Si nanocrystals [J].

Iacona, F ;

Franzò, G ;

Spinella, C .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :1295-1303

[8] OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS [J].

KENYON, AJ ;

TRWOGA, PF ;

FEDERIGHI, M ;

PITT, CW .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (21) :L319-L324

[9] Strong exciton-erbium coupling in Si nanocrystal-doped SiO2 [J].

Kik, PG ;

Brongersma, ML ;

Polman, A .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2325-2327

[10] Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2 [J].

Linnros, J ;

Lalic, N ;

Galeckas, A ;

Grivickas, V .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6128-6134