Observation of individual vortices trapped along columnar defects in high-temperature superconductors

被引:103
作者
Tonomura, A [1 ]
Kasai, H
Kamimura, O
Matsuda, T
Harada, K
Nakayama, Y
Shimoyama, J
Kishio, K
Hanaguri, T
Kitazawa, K
Sasase, M
Okayasu, S
机构
[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan
[4] Univ Tokyo, Dept Adv Mat Sci, Sch Frontier Sci, Tokyo 1130033, Japan
[5] Japan Atom Energy Res Inst, Dept Mat Sci, Tokai, Ibaraki 3191195, Japan
关键词
D O I
10.1038/35088021
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Many superconductors do not entirely expel magnetic flux-rather, magnetic flux can penetrate the superconducting state in the form of vortices. Moving vortices create resistance, so they must be 'pinned' to permit dissipationless current flow. This is a particularly important issue for the high-transition-temperature superconductors, in which the vortices move very easily(1). Irradiation of superconducting samples by heavy ions produces columnar defects, which are considered(2) to be the optimal pinning traps when the orientation of the column coincides with that of the vortex line. Although columnar defect pinning has been investigated using macroscopic techniques(3,4), it has hitherto been impossible to resolve individual vortices intersecting with individual defects. Here we achieve the resolution required to image vortex lines and columnar defects in Bi2Sr2CaCu2O8+delta (Bi-2212) thin films, using a 1-MV field-emission electron microscope(5). For our thin films, we rnd that the vortex lines at higher temperatures are trapped and oriented along tilted columnar defects, irrespective of the orientation of the applied magnetic field. At lower temperatures, however, vortex penetration always takes place perpendicular to the film plane, suggesting that intrinsic 'background' pinning in the material now dominates.
引用
收藏
页码:620 / 622
页数:3
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