Electrically controlled exchange bias for spintronic applications

被引:76
作者
Binek, C
Hochstrat, A
Chen, X
Borisov, P
Kleemann, W
Doudin, B
机构
[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[2] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA
[3] Univ Duisburg Essen, Angew Phys, Duisburg, Germany
关键词
D O I
10.1063/1.1853836
中图分类号
O59 [应用物理学];
学科分类号
摘要
Exchange coupling between a magnetoelectric (111)-oriented Cr2O3 single crystal and a CoPt multilayer with perpendicular anisotropy exhibits an exchange bias field proportional to the applied axial electric field. Extrapolation from bulk to thin film magnetoelectric pinning system suggests promising spintronic applications due to coupling between the electric field-controlled magnetization and the magnetization of a neighbor ferromagnetic layer. Pure voltage control of magnetic configurations of tunneling magnetoresistance spin valves is an attractive alternative to current-induced magnetization switching. (c) 2005 American Institute of Physics.
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页数:3
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