Resistance and spin-direction memory loss at Nb/Cu interfaces

被引：22

作者：

Baxter, DV ^{[1
]}

Steenwyk, SD

Bass, J

Pratt, WP

机构：

[1] Michigan State Univ, Dept Phys & Astron, Ctr Fundamental Mat Res, E Lansing, MI 48824 USA

[2] Michigan State Univ, Ctr Sensor Mat, E Lansing, MI 48824 USA

[3] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA

[4] Calvin Coll, Dept Phys & Astron, Grand Rapids, MI 49546 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.370501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method is described for measuring the loss of spin-direction memory (spin relaxation) in nonmagnetic materials and at nonmagnetic interfaces. The method involves inserting the material of interest into an exchange-biased spin valve and monitoring the associated reduction in the spin valve's magnetoresistance measured with the current perpendicular to the planes. This technique is tested by investigating spin relaxation near Nb/Cu interfaces. A surprisingly large loss per interface is found, between 15% and 25% with larger values being associated with thicker Nb layers. (C) 1999 American Institute of Physics. [S0021-8979(99)19208-9].

引用

页码：4545 / 4547

页数：3

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