A 128-pixel CMOS image sensor with integrated analog nonvolatile memory

被引:16
作者
Aslam-Siddiqi, A [1 ]
Brockherde, W [1 ]
Schanz, M [1 ]
Hosticka, BJ [1 ]
机构
[1] Fraunhofer Inst Microelect Circuits & Syst, D-47057 Duisburg, Germany
关键词
analog memories; EPROM; image sensors;
D O I
10.1109/4.720395
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 128-pixel complementary metal-oxide-semiconductor (CMOS) image sensor array with analog nonvolatile storage for each pixel has been realized in a 1.5-mu m single-poly standard CMOS/EEPROM technology and successfully tested. The integrated nonvolatile memory allows an offset correction for each sensor element, cancellation of the fixed pattern noise, and compensation of the background illumination. The sensor array can also learn a presented pattern and store it in its analog nonvolatile memory just by "seeing." The stored pattern can be read out directly or, in combination with the optical input, it can be used for pattern recognition or motion detection. The required programming circuitry for the analog memory has been integrated on the same chip.
引用
收藏
页码:1497 / 1501
页数:5
相关论文
共 6 条
[1]   A CMOS image sensor with combined analog nonvolatile storage capability [J].
Aslam, A ;
Brockherde, W ;
Hosticka, BJ ;
Vogt, H ;
Zimmer, G .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :923-926
[2]  
BLYTH T, 1991, ISSCC FEB, P192
[3]   TRIMMING ANALOG CIRCUITS USING FLOATING-GATE ANALOG MOS MEMORY [J].
CARLEY, LR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (06) :1569-1575
[4]  
HOLLER M, 1989, P INT JOINT C NEURAL, V2, P191
[5]   OPTICAL CHARACTERISTICS OF CMOS-FABRICATED MOSFETS [J].
KIRKISH, SD ;
DALY, JC ;
JOU, L ;
SU, SF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (02) :299-301
[6]   Smart CMOS image sensor arrays [J].
Schanz, M ;
Brockherde, W ;
Hauschild, R ;
Hosticka, BJ ;
Schwarz, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (10) :1699-1705