OPTICAL CHARACTERISTICS OF CMOS-FABRICATED MOSFETS

被引：11

作者：

KIRKISH, SD ^{[1
]}

DALY, JC ^{[1
]}

JOU, L ^{[1
]}

SU, SF ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 02期

关键词：

D O I：

10.1109/JSSC.1987.1052718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, MOSFET

引用

页码：299 / 301

页数：3

共 8 条

[1] THE INFLUENCE OF LIGHT ON THE PROPERTIES OF NMOS TRANSISTORS IN LASER MU-ZONED CRYSTALLIZED SILICON LAYERS [J].

BOSCH, MA ;

HERBST, D ;

TEWKSBURY, SK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :204-206

[2] INTEGRATED PHOTOCONDUCTIVE DETECTOR AND WAVE-GUIDE STRUCTURE [J].

GAMMEL, JC ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :149-151

[3] OPTICAL INTERCONNECTIONS FOR VLSI SYSTEMS [J].

GOODMAN, JW ;

LEONBERGER, FJ ;

KUNG, SY ;

ATHALE, RA .

PROCEEDINGS OF THE IEEE, 1984, 72 (07) :850-866

[4]

Gray P.R., 1984, ANAL DESIGN ANALOG I

[5] ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING [J].

KATO, K ;

WADA, T ;

TANIGUCHI, K .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :378-382

[6] SHORT-CHANNEL MOS-TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIME [J].

MULLER, W ;

RISCH, L ;

SCHUTZ, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1778-1784

[7] FET PHOTODETECTORS - A COMBINED STUDY USING OPTICAL AND ELECTRON-BEAM STIMULATION [J].

NOAD, JP ;

HARA, EH ;

HUM, RH ;

MACDONALD, RI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1792-1797

[8] INFLUENCE OF FLOATING SUBSTRATE POTENTIAL ON CHARACTERISTICS OF ESFI MOS-TRANSISTORS [J].

TIHANYI, J ;

SCHLOTTERER, H .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :309-314

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