ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING

被引：7

作者：

KATO, K

WADA, T

TANIGUCHI, K

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期

关键词：

D O I：

10.1109/JSSC.1985.1052317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：378 / 382

页数：5

共 10 条

[1] ACCURATE CALCULATIONS OF FORWARD DROP AND POWER DISSIPATION IN THYRISTORS [J].

ADLER, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (01) :16-22

[2] CHARACTERIZATION OF SILICON-ON-SAPPHIRE IGFET TRANSISTORS [J].

ELMANSY, YA ;

CAUGHEY, DM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1148-1153

[3]

FICHTNER W, 1978, SOLID STATE ELECTRON, V12, P47

[4] 2-DIMENSIONAL CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J].

GAUR, SP ;

NAVON, DH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) :50-57

[5] A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER [J].

SANO, E ;

KASAI, R ;

OHWADA, K ;

ARIYOSHI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2043-2050

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[7]

SZE SM, PHYSICS SEMICONDUCTO

[8] INFLUENCE OF FLOATING SUBSTRATE POTENTIAL ON CHARACTERISTICS OF ESFI MOS-TRANSISTORS [J].

TIHANYI, J ;

SCHLOTTERER, H .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :309-314

[9] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J].

VANOVERSTRAETEN, R ;

DEMAN, H .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :583-+

[10]

YAMAGUCHI K, 1983, P INT C NASECODE, P311

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