2-DIMENSIONAL CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS

被引：79

作者：

GAUR, SP

NAVON, DH

机构：

[1] IBM CORP, SYST PROD DIV, POUGHKEEPSIE, NY 12602 USA

[2] UNIV MASSACHUSETTS, ELECT & COMP ENGN DEPT, AMHERST, MA 01002 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 01期

关键词：

D O I：

10.1109/T-ED.1976.18346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：50 / 57

页数：8

相关论文

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