THE INFLUENCE OF LIGHT ON THE PROPERTIES OF NMOS TRANSISTORS IN LASER MU-ZONED CRYSTALLIZED SILICON LAYERS

被引：6

作者：

BOSCH, MA

HERBST, D

TEWKSBURY, SK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 06期

关键词：

D O I：

10.1109/EDL.1984.25888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：204 / 206

页数：3

共 9 条

[1]

BOSCH MA, 1982, JUN P EL MAT C FORT

[2] ISLAND-EDGE EFFECTS OF TRANSISTORS FABRICATED IN LARGE-AREA LASER MICRO-ZONE CRYSTALLIZED SI ON INSULATOR [J].

HERBST, D ;

BOSCH, MA ;

TEWKSBURY, SR .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) :280-282

[3] SUBSTRATE INFLUENCE ON NMOS TRANSISTORS IN LARGE-AREA LASER CRYSTALLIZED ISOLATED SI LAYERS [J].

HERBST, D ;

BOSCH, MA ;

TEWKSBURY, SK .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :205-207

[4] SINGLE-CRYSTAL SILICON TRANSISTORS IN LASER-CRYSTALLIZED THIN-FILMS ON BULK GLASS [J].

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FENNELL, LE .

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MALHI, SDS ;

VAANDRAGER, BL .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1083-1085

[6] SILICON PHOTODETECTOR INTEGRATED ON A LITHIUM TANTALATE SUBSTRATE [J].

REEDY, RE ;

LEE, SH .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :19-21

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[8] INFLUENCE OF FLOATING SUBSTRATE POTENTIAL ON CHARACTERISTICS OF ESFI MOS-TRANSISTORS [J].

TIHANYI, J ;

SCHLOTTERER, H .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :309-314

[9] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :561-563

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