SUBSTRATE INFLUENCE ON NMOS TRANSISTORS IN LARGE-AREA LASER CRYSTALLIZED ISOLATED SI LAYERS

被引：1

作者：

HERBST, D

BOSCH, MA

TEWKSBURY, SK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 07期

关键词：

D O I：

10.1109/EDL.1983.25706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 207

页数：3

共 9 条

[1]

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[7] INFLUENCE OF FLOATING SUBSTRATE POTENTIAL ON CHARACTERISTICS OF ESFI MOS-TRANSISTORS [J].

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[8] STRESS-ENHANCED CARRIER MOBILITY IN ZONE-MELTING RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO-2-COATED SUBSTRATES [J].

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[9]

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