FET PHOTODETECTORS - A COMBINED STUDY USING OPTICAL AND ELECTRON-BEAM STIMULATION

被引：18

作者：

NOAD, JP

HARA, EH

HUM, RH

MACDONALD, RI

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 11期

关键词：

D O I：

10.1109/T-ED.1982.21028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1792 / 1797

页数：6

共 14 条

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[8]

MACDONALD RI, 1981, JUN INT C COMM DENV

[9] CURRENT-GAIN CHARACTERISTICS OF SCHOTTKY-BARRIER AND P-N-JUNCTION ELECTRON-BEAM SEMICONDUCTOR DIODES [J].

SIEKANOWICZ, WW ;

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[10]

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