HIGH-GAIN OPTICAL-DETECTION WITH GAAS FIELD-EFFECT TRANSISTORS

[1] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 193 - 193

[2] EDWARDS WS, COMMUNICATION

[3] GAMMEL JC, 1980, DIGEST TOPICAL M INT

[4] GAMMEL JC, 1978, IEEE INT ELECTRON DE

[5] LIGHT-INDUCED EFFECTS IN GAAS-FETS [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 439 - 441

[6] A BROAD-BAND OPTOELECTRONIC MICROWAVE SWITCH [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (06) : 662 - 665

[7] GAAS-MESFET DEMODULATES GIGABIT SIGNAL RATES FROM GAALAS INJECTION-LASER [J]. PROCEEDINGS OF THE IEEE, 1979, 67 (06) : 966 - 968

[8] PAN JJ, 1978, 22ND SPIE INT S SAN

[9] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 459 - 464

[10] SUGETA T, 1980, J APPL PHYS, V19, pL63

[1] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 193 - 193

[2] EDWARDS WS, COMMUNICATION

[3] GAMMEL JC, 1980, DIGEST TOPICAL M INT

[4] GAMMEL JC, 1978, IEEE INT ELECTRON DE

[5] LIGHT-INDUCED EFFECTS IN GAAS-FETS [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 439 - 441

[6] A BROAD-BAND OPTOELECTRONIC MICROWAVE SWITCH [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (06) : 662 - 665

[7] GAAS-MESFET DEMODULATES GIGABIT SIGNAL RATES FROM GAALAS INJECTION-LASER [J]. PROCEEDINGS OF THE IEEE, 1979, 67 (06) : 966 - 968

[8] PAN JJ, 1978, 22ND SPIE INT S SAN

[9] METAL-SEMICONDUCTOR-METAL PHOTODETECTOR FOR HIGH-SPEED OPTOELECTRONIC CIRCUITS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 459 - 464

[10] SUGETA T, 1980, J APPL PHYS, V19, pL63