GAAS-MESFET DEMODULATES GIGABIT SIGNAL RATES FROM GAALAS INJECTION-LASER

被引：18

作者：

OSTERWALDER, JM ^{[1
]}

RICKETT, BJ ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

PROCEEDINGS OF THE IEEE | 1979年 / 67卷 / 06期

关键词：

D O I：

10.1109/PROC.1979.11368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter describes the experimental results of an optical transmission link with modulation rates up to 4 GHz. The transmitter consists of an FET driven GaAlAs injection laser emitting at a 8500 Å wavelength. The receiver makes use of a GaAs MESFET chip which is compared with a standard silicon avalanche photodiode demodulator. Copyright © 1979 by The Institute Of Electrical And Electronics Engineers, Inc.

引用

页码：966 / 968

页数：3

共 8 条

[1] 1.1 GB-S PSEUDORANDOM PULSE-CODE-MODULATION OF 1.27 MU-M WAVELENGTH CW INGAASP-INP DH LASERS [J].