MODULATION OF ROOM-TEMPERATURE GAAS LASERS AT X-BAND FREQUENCIES

被引：4

作者：

LAKSHMINARAYANA, MR

HUNSPERGER, RG

PARTAIN, LD

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 19期

关键词：

D O I：

10.1049/el:19780430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：640 / 641

页数：2

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[2] MICROWAVE MODULATION OF GAAS INJECTION LASER
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[J]. APPLIED PHYSICS, 1974, 5 (01): : 25 - 36
[5] AMPLITUDE MODULATION OF DIODE LASER LIGHT IN MILLIMETER-WAVE REGION
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (01): : 135 - &
[6] DIRECT MODULATION OF A DOUBLE-HETEROSTRUCTURE LASER USING A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 519 - 524