RECENT PROGRESS IN SEMICONDUCTOR LASERS - CW GAAS LASERS ARE NOW READY FOR NEW APPLICATIONS

[1] Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826

[2] BASOV NG, 1968, IEE J QUANTUM ELEC 2, VQE 4, P855

[3] BIARD JR, 1966, P INT S GAAS, P113

[4] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 322 - 333

[5] DIRECT MODULATION OF DOUBLE-HETEROSTRUCTURE LASERS AT RATES UP TO 1 GBIT-S [J]. ELECTRONICS LETTERS, 1973, 9 (02) : 34 - 36

[6] COMPAAN K, 1973, DIGEST INTERMAG C

[7] DASARO LA, 1972, PHYSICS TECHNOLOGY S, P310

[8] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[9] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[10] GOOCH CH, 1969, GAAS LASERS

[1] Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826

[2] BASOV NG, 1968, IEE J QUANTUM ELEC 2, VQE 4, P855

[3] BIARD JR, 1966, P INT S GAAS, P113

[4] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 322 - 333

[5] DIRECT MODULATION OF DOUBLE-HETEROSTRUCTURE LASERS AT RATES UP TO 1 GBIT-S [J]. ELECTRONICS LETTERS, 1973, 9 (02) : 34 - 36

[6] COMPAAN K, 1973, DIGEST INTERMAG C

[7] DASARO LA, 1972, PHYSICS TECHNOLOGY S, P310

[8] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044

[9] THERMAL EXPANSION OF ALAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +

[10] GOOCH CH, 1969, GAAS LASERS