DIRECT MODULATION OF A DOUBLE-HETEROSTRUCTURE LASER USING A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE

被引：14

作者：

YANAI, H ^{[1
]}

YANO, M ^{[1
]}

KAMIYA, T ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECTR ENGN,TOKYO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：519 / 524

页数：6

共 16 条

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[9] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS [J].

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