Structure of the ESR spectra of thin film silicon after electron bombardment

被引：8

作者：

Astakhov, O. ^{[1
]}

Carius, R. ^{[1
]}

Lambertz, A. ^{[1
]}

Petrusenko, Yu. ^{[2
]}

Borysenko, V. ^{[2
]}

Barankov, D. ^{[2
]}

Finger, F. ^{[1
]}

机构：

[1] Forschungszentrum Julich, D-52425 Julich, Germany

[2] Kharkov Phys & Technol Inst, Ctr Nat Sci, ISSPMST, UA-61108 Kharkov, Ukraine

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

关键词：

silicon; defects;

D O I：

10.1016/j.jnoncrysol.2007.10.048

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Defect creation by MeV electron bombardment of a-Si:H and mu c-Si:H thin films is used to explore hidden features of the electron spin resonance spectra. Different dynamics of creation and annealing for different paramagnetic states is expected and found. In a-Si:H the g-value of the db resonance does not change after irradiation, but a pair of satellites is observed on its wings. In the spectra of mu c-Si:H three additional lines can be extracted after irradiation, overlapping with the central resonance. Careful analysis of the spectra shows also modification of the dangling bond resonance in mu c-Si:H that is compatible with variations of two components of the spectra and supports the model of two dominant defect states in mu c-Si:H. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：2329 / 2332

页数：4

共 14 条

[1]

[Anonymous], 1997, Electron Spin Resonance: A Comprehensive Treatise on Experimental Techniques

[2] Electron spin resonance in thin film silicon after low temperature electron irradiation [J].