Exciton binding energies in organic semiconductors

被引：366

作者：

Knupfer, M ^{[1
]}

机构：

[1] Leibniz Inst Festkorper & Werkstoffforsch Dresden, D-01171 Dresden, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 77卷 / 05期

关键词：

D O I：

10.1007/s00339-003-2182-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The exciton binding energy is one of the key parameters that govern the physics of many opto-electronic organic devices. It is shown that the previously reported values for the exciton binding energies in many organic semiconductors, which differ by more than an order of magnitude, can be consistently rationalized within the framework of the charging energy of the molecular units, with a simple dependence of the exciton binding energy on the length of these units. The implications of this result are discussed.

引用

页码：623 / 626

页数：4

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