Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance

被引:100
作者
Centurioni, E [1 ]
Iencinella, D
机构
[1] CNR, IMM, Sez Bologna, I-40129 Bologna, Italy
[2] Univ Bologna, DICASM, I-40136 Bologna, Italy
关键词
amorphous materials; photovoltaic cells; semiconductor heterojunctions; simulation;
D O I
10.1109/LED.2003.811405
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigated with numerical simulations the effects that transparent conductive oxide front contact (TCO) can have on amorphous silicon/crystalline silicon heterojunction solar cells. We found that, due to the extremely thin emitter layer used in this kind of device, the built-in potential available cannot be merely defined by the difference between the work function of the emitter and the base, but it depends on TCO work function too. As a consequence, because the correlation between built-in potential and open circuit voltage, TCO work function strongly affects the solar cell performance. Simulation results show that an higher work function leads to the best device efficiency.
引用
收藏
页码:177 / 179
页数:3
相关论文
共 14 条
[1]  
[Anonymous], P 24 IEEE PHOT SPEC
[2]  
Green M. A., 1987, HIGH EFFICIENCY SOLA
[3]   Kelvin probe and ultraviolet photoemission measurements of indium tin oxide work function:: a comparison [J].
Kim, JS ;
Lägel, B ;
Moons, E ;
Johansson, N ;
Baikie, ID ;
Salaneck, WR ;
Friend, RH ;
Cacialli, F .
SYNTHETIC METALS, 2000, 111 (111) :311-314
[4]   Transparent and conductive multicomponent oxide films prepared by magnetron sputtering [J].
Minami, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :1765-1772
[5]   Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering [J].
Minami, T ;
Miyata, T ;
Yamamoto, T .
SURFACE & COATINGS TECHNOLOGY, 1998, 108 (1-3) :583-587
[6]   Influence of front contact material on silicon heterojunction solar cell performance [J].
Rizzoli, R ;
Galloni, R ;
Summonte, C ;
Pinghini, R ;
Centurioni, E ;
Zignani, F ;
Desalvo, A ;
Rava, P ;
Madan, A .
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 :807-812
[7]   Using computer modeling analysis in single junction a-SiGe:H p-i-n solar cells [J].
Rubinelli, FA ;
Jiménez, R ;
Rath, JK ;
Schropp, REI .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :2409-2416
[8]   EFFECT OF CONTACT BARRIER HEIGHTS ON A-SI-H P-I-N DETECTOR AND SOLAR-CELL PERFORMANCE [J].
RUBINELLI, FA ;
ARCH, JK ;
FONASH, SJ .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) :1621-1630
[9]  
Schmidt M., 2001, P 17 EUR PHOT SOL EN, P1383
[10]  
SINENCIO FS, 1983, J APPL PHYS, V54, P2757, DOI 10.1063/1.332303