Characterization on polymerized thin films for low-k insulator using PECVD

被引：26

作者：

Bae, I-S. ^{[1
,2
]}

Cho, S-J. ^{[1
,2
]}

Choi, W. S. ^{[3
]}

Cho, H. J. ^{[4
]}

Hong, B. ^{[4
]}

Jeong, H. -D. ^{[5
]}

Boo, J. -H. ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, Suwon 440746, South Korea

[3] Hanbat Natl Univ, Dept Elect Engn, Taejon 305719, South Korea

[4] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

[5] Chonnam Natl Univ, Coll Nat Sci, Dept Chem, Kwangju 500757, South Korea

来源：

PROGRESS IN ORGANIC COATINGS | 2008年 / 61卷 / 2-4期

关键词：

plasma polymerization; PECVD; dielectric constant;

D O I：

10.1016/j.porgcoat.2007.09.031

中图分类号：

O69 [应用化学];

学科分类号：

081704 [应用化学];

摘要：

Plasma polymerized cyclohexane and TEOS hybrid thin films have been deposited on silicon substrates at room temperature with varying RF power by plasma-enhanced chemical vapor deposition (PECVD) method. As-grown thin films were annealed in vacuum. Cyclohexane monomer was utilized as organic precursor and TEOS monomer as inorganic precursor. Hydrogen and argon were used as bubbler and carrier gases, respectively. The as-grown plasma polymerized hybrid thin films were analyzed by FT-IR spectroscopy, hardness and modulus measurements, and electrical properties. Annealed hybrid thin films were also analyzed. The dielectric constant of thin films increases with increasing plasma power. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：245 / 248

页数：4

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