A simple route to the synthesis of Pr2O3 high-k thin films

被引：57

作者：

Lo Nigro, R

Toro, RG

Malandrino, G

Raineri, V

Fragalà, IL

机构：

[1] Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy

[2] INSTM, UdR Catania, I-95125 Catania, Italy

[3] CNR, IMM, Sez Catania, I-95121 Catania, Italy

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 13期

关键词：

D O I：

10.1002/adma.200304806

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality Pr2O3 high-k thin films with very promising electrical properties have been prepared by metal-organic chemical vapor deposition on Si(100) substrates. The most critical factor for selective and reproducible Pr2O3 film formation is the oxygen partial pressure in the reaction chamber. X-ray (see Figure) and transmission electron microscopy diffraction patterns show that the oxide layer grows with a hexagonal random structure.

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页码：1071 / +

页数：6

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