Metal-to-insulator transition and superconductivity in boron-doped diamond

被引:47
作者
Bustarret, E. [1 ]
Achatz, P. [1 ,2 ]
Sacepe, B. [2 ]
Chapelier, C. [2 ]
Marcenat, C. [2 ]
Ortega, L. [1 ]
Klein, T. [1 ,3 ]
机构
[1] CNRS, Inst Neel, F-38042 Grenoble, France
[2] CEA Saclay, DRFMC, F-38054 Grenoble, France
[3] Univ Grenoble 1, F-38041 Grenoble, France
来源
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2008年 / 366卷 / 1863期
关键词
diamond; boron doping; superconductivity; metal-insulator transition;
D O I
10.1098/rsta.2007.2151
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.
引用
收藏
页码:267 / 279
页数:13
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