Ultra-deep LIGA process

被引:35
作者
Cheng, Y
Shew, BY
Lin, CY
Wei, DH
Chyu, MK
机构
[1] Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan
[2] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA
关键词
D O I
10.1088/0960-1317/9/1/307
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ultra-deep (UD) LIGA strategy for die fabrication that has features up to two millimeters in thickness and 100 microns in linewidth has been developed at SRRC, Taiwan. Here, a successive exposure strategy has been demonstrated to overcome the shortage of hard x-rays generated by a medium energy light source such as the 1.5 GeV Taiwan Light Source. Furthermore, this successive exposure process accumulates much more irradiation dosage in the photoresist that leads to a reduction of the developing time and thus produces a UD microstructure with very high aspect ratio. The present process makes use of a conformal mask technology that permits the sidewalls of the microstructure to be perfectly aligned after multiple exposures and developments. Since the total reflection of x-rays inhibits further dosage deposition on the sidewall after the first exposure, the successive exposure process improves the precision of the microstructure. The main concerns of fabricating a UD microstructure include the low diffusion speed involved in developing a high-aspect-ratio microstructure and the high residual stress between photoresist and substrate. A deeper microstructure can be achieved by choosing proper photoresist material, increasing the diffusion speed of development and designing a suitable structure to balance residual stress. A low temperature process is essential to keep the thermal stress from destroying UD microstructures.
引用
收藏
页码:58 / 63
页数:6
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