Temperature dependence of the current-voltage characteristics of a carbon-nanotube heterojunction

被引:21
作者
Kim, J [1 ]
Lee, JO
Oh, H
Yoo, KH
Kim, JJ
机构
[1] Korea Res Inst Stand & Sci, Elect Device Grp, Taejon 305600, South Korea
[2] Chonbuk Natl Univ, Dept Phys, Chonju 561756, South Korea
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 16期
关键词
D O I
10.1103/PhysRevB.64.161404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrical transport properties of a heterojunction consisting of two multi-wall carbon nanotubes were studied. The current-voltage characteristics of the junction exhibited reproducible rectifying behavior which could be explained well by the Schottky barrier junction model in the intermediate temperature region. The barrier height and the diffusion potential were determined by fitting the current-voltage characteristics to the generalized diode equation. Noticeable deviations from the ideal behavior were observed both in high and low-temperature regions.
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页数:4
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共 18 条
  • [1] Single-electron transport in ropes of carbon nanotubes
    Bockrath, M
    Cobden, DH
    McEuen, PL
    Chopra, NG
    Zettl, A
    Thess, A
    Smalley, RE
    [J]. SCIENCE, 1997, 275 (5308) : 1922 - 1925
  • [2] Carbon nanotubes as molecular quantum wires
    Dekker, C
    [J]. PHYSICS TODAY, 1999, 52 (05) : 22 - 28
  • [3] Dresselhaus M. S., 1996, SCI FULLERENES CARBO
  • [4] Crossed nanotube junctions
    Fuhrer, MS
    Nygård, J
    Shih, L
    Forero, M
    Yoon, YG
    Mazzoni, MSC
    Choi, HJ
    Ihm, J
    Louie, SG
    Zettl, A
    McEuen, PL
    [J]. SCIENCE, 2000, 288 (5465) : 494 - 497
  • [5] Formation of low-resistance ohmic contacts between carbon nanotube and metal electrodes by a rapid thermal annealing method
    Lee, JO
    Park, C
    Kim, JJ
    Kim, J
    Park, JW
    Yoo, KH
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (16) : 1953 - 1956
  • [6] Negative differential resistance in nanotube devices
    Léonard, F
    Tersoff, J
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (22) : 4767 - 4770
  • [7] Conductance spikes in single-walled carbon nanotube field-effect transistor
    Liu, K
    Burghard, M
    Roth, S
    Bernier, P
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (16) : 2494 - 2496
  • [8] Single- and multi-wall carbon nanotube field-effect transistors
    Martel, R
    Schmidt, T
    Shea, HR
    Hertel, T
    Avouris, P
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (17) : 2447 - 2449
  • [9] MILNET AG, 1972, HETEROJUNCTIONS META
  • [10] Schottky barriers in carbon nanotube heterojunctions
    Odintsov, AA
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (01) : 150 - 153