Spin valves using amorphous magnetic layers

被引:18
作者
Tsunashima, S [1 ]
Jimbo, M [1 ]
Imada, Y [1 ]
Komiyama, K [1 ]
机构
[1] DAIDO INST TECHNOL,NAGOYA,AICHI 457,JAPAN
关键词
spin valve; giant magnetoresistance; thin film; electron scattering; FILMS;
D O I
10.1016/S0304-8853(96)00483-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The giant magnetoresistance (GMR) effect is reported for spin valves using very thin amorphous (a-) magnetic layers. Two kinds of spin valve structures have been examined, one an a-CoFeB/Cu/Co sandwich and the other an a-CoFeB/Cu/a-CoFeB/NiO spin valve. In the Co/Cu/a-CoFeB sandwich, the maximum MR ratio was obtained at the thickness of the amorphous layer of 2 nm. In a-CoFeB/Cu/a-CoFeB/NiO spin valves, the maximum MR ratio was also obtained at the thickness of the free amorphous layer of 2 nm, slightly decreasing at a thickness of 6 nm, although the antiparallel magnetization configuration was still satisfied. This demonstrates that amorphous magnetic alloys are favorable for making very thin spin valves in spite of the short mean free path of the conduction electrons.
引用
收藏
页码:111 / 114
页数:4
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