Degradation in blue-emitting conjugated polymer diodes due to loss of ohmic hole injection

被引:31
作者
Khan, RUA
Bradley, DDC
Webster, MA
Auld, JL
Walker, AB
机构
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2AZ, England
[2] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England
[3] ETH Honggerberg, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
关键词
D O I
10.1063/1.1645982
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report studies of the evolution of the hole injection and transport characteristics of fluorene-based polymer diodes subjected to electrical stressing. Dark injection (DI) transient measurements show that the polyethylenedioxythiophene/polystyrenesulphonate (PEDOT:PSS)-topolymer contact is initially ohmic, but as stressing proceeds, the transients shift to longer times and lose their characteristic temporal profile. A comparison with time-of-flight transient photocurrent measurements led us to conclude that the DI transient is modified by a loss of ohmic injection. Electroabsorption measurements show a drastic reduction in the built-in potential from 1.4 V to 0.6 V. Device simulation shows this to be consistent with a change in the PEDOT:PSS work function, and the introduction of an interfacial resistance at the PEDOT:PSS-to-polymer contact. (C) 2004 American Institute of Physics.
引用
收藏
页码:921 / 923
页数:3
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